IGBT Modules 100A 1200V

Category List

Search Products

What's New

>> Contact Information

GREEGOO Electric Co.,Ltd.
No.6 Floor,Jinye Mansion, Lvzhuang, Liushi, Yueqing, Zhejiang, 325604 P.R. China
Tel: +86-577-62776000
Mob: +86-159 5877 6000
Fax: +86-4008875666 Ext 088150
E-mail: Peter@greegoo.com
Skype: greegoo_peter
MSN: greegoo_peter@hotmail.com
Visit us on the web at...
http://www.greegoo.com

You are here: Home >> Products >> Power Semiconductors >> IGBT Power Modules >> IGBT Modules 100A 1200V

	Specification PDF Download

	Bookmark This Page
	Print This Page

	Live Messenger
	Skype Me
	Peter@greegoo.com
Send Inquiry
Add to Inquiry Basket \| View Inquiry Basket

IGBT Modules 100A 1200V

Typical applications

- SPT:Soft-punch-through technologe
- VCE(sat)with positivetemperature coefficient
- Lower on-state and switching loss
- Hight short circuit capability
- “vacuum+H2+H” process gasatmosphere,Nearly voidlesssoldering results1234567

Maximum rated values

	Symbol	Conditions	values	Unit
IGBT
Collector-emitter voltage	VCES		1200	V
DC-collector current	IC	TC=25(85)℃	150(100)	A
repetitive peak voltage	ICRM	TC=25(80)℃, tp=1ms	300(200)	A
gate-emitter peak voltage	VGES		+20	V
operation temperature	Tvj		-40~+125	℃
storage temperature	Tstg		-40~+150	℃
insulation test voltage	VISOL	RMS, 1min, 50Hz	2500	V
Inverse diode
DC-forward current	IF	Tc=25(80)℃	150 (95)	A
repetitive peak forward voltage	IFRM	Tc=25(80)℃, tp=1ms	300 (190)	A
forward surge current	IFSM	tp=10ms, sin, Tj=150℃	1000	A

Characteristic values

Paramiter	Symbol	Conditions	values			IGBT
Paramiter	Symbol	Conditions	typ.	typ.	max.	IGBT
IGBT
gate threshold voltage	VGE(th)	VGE=VCE, lC=4mA,Tj=25℃	4.5	5.5	6.5	V
collector-emitter cut-off current	ICES	VGe=0V, Vce=VCES, Tj=25(125)℃		0.1	0.3	mA
gate-leakage current	IGES	VGE=0V, VGE=20V, Tj=25℃	-200		200	nA
collector-emitter threshold voltage	VCE (TO)	Tj=25 (125)℃	1(0.9)		1.15(1.05)	V
collector-emitter threshold voltage	rCE	VGE=15V, Tj=25 (125)℃	9(12)		12(15)	mΩ
collector-emitter saturation votage	VCE(SAT)	lC=75 A, VGE=15V, chip level	1.9 (2.1)		2.35 (2.55)	V
input capacitance	Cies	VGE=0, VCE=25V, f=1MHZ		9		nF
output capacitance	Coes			1		nF
Reverse transfer capacitance	Cres			1		nF
stray inductance module	LCE				25	nH
module lead resistance	RCC’+EE’	terminals-chip, Tc=25 (125)℃	0.75 (1)			mΩ
Short circuit current	ISC	tpsc≤10s,VGE=15V,TVj=125℃, VCC=900V, VCEM≤1200V	470			A
turen on delay time	td (on)	VCC=600V, lc=70A Rgon=Rgoff=12 Tj=125℃, VGE=+15V	190			ns
rise time	tr		50			ns
turn off delay time	td (off)		590			ns
fall time	tf		50			ns
turn-on energy loss per pules	Eon		11.5			mj
turn-off energy loss per pulse	Eoff		9.5			mj
Inverse diode
forward voltage	VF	lF=100A, VGE=0V; Tj=25(125)℃ Tj=25(125)≡		2.3(1.9)	2.55(2.0)	V
threshold voltage of diode	V(TO)	lF=100A, VGE=0V; Tj=25(125)℃ Tj=25(125)≡		1.1	1.2	V
peak reverse recovery current	lRRM	lF=100A, VGE=0,diF/dt=600A/us Tj=125, VR=600V	62			A
Reverse recovered time	trr	lF=100A, VGE=0,diF/dt=600A/us Tj=125, VR=600V	200			nS
Thermal properties
Thermal resistance, junction to case	Rth(j-c)	per IGBT	0.17			K/W
Thermal resistance, junction to case	Rth(j-c)D	per inverse diode	0.45			K/W
Thermal resistance, case to heat sink	Rth(c-s)	per module	0.25			K/W
Mechanical properties
mounting torque	M1	M6	3		5	NM
terminal connection tord	M2	M5	2.5		5	NM
weight	MAX	176				g
Case color		white				K/W
Dimensions	MAX	94x34x30.5				mm

Dimensions

G100-12CS1 Technical Details

If you would like a quotation or further information on this product, please fill in the form below and we will reply to you within 1 working day.