Typical applications
- SPT:Soft-punch-through technologe
- VCE(sat)with positivetemperature coefficient
- Lower on-state and switching loss
- Hight short circuit capability
- “vacuum+H2+H” process gasatmosphere,Nearly voidlesssoldering results1234567
Maximum rated values
| |
Symbol |
Conditions |
values |
Unit |
| IGBT |
| Collector-emitter voltage |
VCES |
|
1200 |
V |
| DC-collector current |
IC |
TC=25(85)℃ |
150(100) |
A |
| repetitive peak voltage |
ICRM |
TC=25(80)℃, tp=1ms |
300(200) |
A |
| gate-emitter peak voltage |
VGES |
|
+20 |
V |
| operation temperature |
Tvj |
|
-40~+125 |
℃ |
| storage temperature |
Tstg |
|
-40~+150 |
℃ |
| insulation test voltage |
VISOL |
RMS, 1min, 50Hz |
2500 |
V |
| Inverse diode |
| DC-forward current |
IF |
Tc=25(80)℃ |
150 (95) |
A |
| repetitive peak forward voltage |
IFRM |
Tc=25(80)℃, tp=1ms |
300 (190) |
A |
| forward surge current |
IFSM |
tp=10ms, sin, Tj=150℃ |
1000 |
A |
Characteristic values
| Paramiter |
Symbol |
Conditions |
values |
IGBT |
| typ. |
typ. |
max. |
| IGBT |
| gate threshold voltage |
VGE(th) |
VGE=VCE, lC=4mA,Tj=25℃ |
4.5 |
5.5 |
6.5 |
V |
| collector-emitter cut-off current |
ICES |
VGe=0V, Vce=VCES, Tj=25(125)℃ |
|
0.1 |
0.3 |
mA |
| gate-leakage current |
IGES |
VGE=0V, VGE=20V, Tj=25℃ |
-200 |
|
200 |
nA |
| collector-emitter threshold voltage |
VCE (TO) |
Tj=25 (125)℃ |
1(0.9) |
|
1.15(1.05) |
V |
| collector-emitter threshold voltage |
rCE |
VGE=15V, Tj=25 (125)℃ |
9(12) |
12(15) |
mΩ |
| collector-emitter saturation votage |
VCE(SAT) |
lC=75 A, VGE=15V, chip level |
1.9 (2.1) |
2.35 (2.55) |
V |
| input capacitance |
Cies |
VGE=0, VCE=25V, f=1MHZ |
|
9 |
|
nF |
| output capacitance |
Coes |
|
1 |
|
nF |
| Reverse transfer capacitance |
Cres |
|
1 |
|
nF |
| stray inductance module |
LCE |
|
|
|
25 |
nH |
| module lead resistance |
RCC’+EE’ |
terminals-chip, Tc=25 (125)℃ |
0.75 (1) |
mΩ |
| Short circuit current |
ISC |
tpsc≤10s,VGE=15V,TVj=125℃,
VCC=900V, VCEM≤1200V |
470 |
A |
| turen on delay time |
td (on) |
VCC=600V, lc=70A
Rgon=Rgoff=12 Tj=125℃,
VGE=+15V |
190 |
ns |
| rise time |
tr |
50 |
ns |
| turn off delay time |
td (off) |
590 |
ns |
| fall time |
tf |
50 |
ns |
| turn-on energy loss per pules |
Eon |
11.5 |
mj |
| turn-off energy loss per pulse |
Eoff |
9.5 |
mj |
| Inverse diode |
| forward voltage |
VF |
lF=100A, VGE=0V;
Tj=25(125)℃ Tj=25(125)≡ |
|
2.3(1.9) |
2.55(2.0) |
V |
| threshold voltage of diode |
V(TO) |
|
1.1 |
1.2 |
V |
| peak reverse recovery current |
lRRM |
lF=100A, VGE=0,diF/dt=600A/us
Tj=125, VR=600V
|
62 |
A |
| Reverse recovered time |
trr |
200 |
nS |
| Thermal properties |
| Thermal resistance, junction to case |
Rth(j-c) |
per IGBT |
0.17 |
K/W |
| Rth(j-c)D |
per inverse diode |
0.45 |
K/W |
| Thermal resistance, case to heat sink |
Rth(c-s) |
per module |
0.25 |
K/W |
| Mechanical properties |
| mounting torque |
M1 |
M6 |
3 |
|
5 |
NM |
| terminal connection tord |
M2 |
M5 |
2.5 |
|
5 |
NM |
| weight |
MAX |
176 |
g |
| Case color |
|
white |
K/W |
| Dimensions |
MAX |
94x34x30.5 |
mm |
Dimensions
 |
