CAFN50N120A Silicon N-Channel Power MOSFET

1. Key Parameters:

   • Drain-Source Voltage (V_DSS): 1200V
   • Continuous Drain Current (I_D): 50A
   • Power Dissipation (P_D): 700W
   • On-Resistance (R_DS(ON)MAX): 330mΩ
     
     

2. Features:

   • Fast Switching
   • Improved ESD Capability
   • 100% Single Pulse Avalanche Energy Test
     
     

3. Applications:

   • Power switch circuits
     
     

4. Absolute Maximum Ratings (unless otherwise specified, TC=25℃):

   • Drain-Source Voltage (V_DSS): 1200V
   • Continuous Drain Current (I_D): 50A (TC=25℃), 35A (TC=100℃)
   • Pulsed Drain Current (I_DMa1): 200A
   • Gate-Source Voltage (V_GS): ±40V
   • Single Pulse Avalanche Energy (E_AS): 3500mJ
   • Repetitive Avalanche Energy (E_Ara1): 50mJ
   • Avalanche Current (I_ARa1): 50A
   • Peak Diode Recovery dv/dt: 5.0V/ns
   • Power Dissipation (P_D): 700W
   • Derating Factor above 25℃: 5.7W/℃
   • Operating Junction and Storage Temperature Range (T_J, T_stg): -55 to 150℃
   • Maximum Temperature for Soldering (T_L): 300℃
     
     

5. Thermal Characteristics:

   • Thermal Resistance, Junction-to-Case (R_thJC): 0.18℃/W
   • Thermal Resistance, Case to Heatsink (R_thcs): 0.05℃/W
     
     

6. Electrical Characteristics (unless otherwise specified, TC=25℃):

   • Drain-Source Breakdown Voltage (V_DSS): 1200V
   • Drain-Source Leakage Current (I_DSS): Max 1.0µA (25℃), Max 100µA (125℃)
   • Gate-Source Forward Leakage (I_GSS(F)): Max 100nA
   • Gate-Source Reverse Leakage (I_GSS(R)): Max -100nA
   • On-Resistance (R_DS(ON)): Max 330mΩ
   • Gate Threshold Voltage (V_GS(TH)): 3.0 to 5.0V
   • Forward Transconductance (g_fs): Typical 18S
     
     

7. Dynamic Characteristics:

   • Input Capacitance (C_iss): Typical 13nF
   • Output Capacitance (C_oss): Typical 1090pF
   • Reverse Transfer Capacitance (C_rss): Typical 117pF
   • Total Gate Charge (Q_g): Typical 480nC
   • Gate to Source Charge (Q_gs): Typical 88nC
   • Gate to Drain Charge (Q_gd): Typical 160nC
     
     

8. Source-Drain Diode Characteristics:

   • Continuous Source Current (I_SD): Max 50A
   • Maximum Pulsed Current (I_SM): Max 200A
   • Diode Forward Voltage (V_SD): Max 1.5V
   • Reverse Recovery Time (t_rr): Typical 580ns
   • Reverse Recovery Charge (Q_rr): Typical 5.9µC
     
     

CAFN50N120A Silicon N-Channel Power MOSFET is packaged in SOT-227B, complies with RoHS standards, and is suitable for various power switching circuits for system miniaturization and high efficiency.