SOT-227B SOT-227 Package
The device is housed in a SOT-227B package with an isolation voltage of 3000VAC, meeting industry standard outlines and RoHS compliance. The epoxy meets UL 94V-0 standards, and the base plate is made of copper with internal DCB isolation, offering advanced power cycling capabilities. These features ensure excellent performance in various power control and conversion applications, guaranteeing efficient and reliable operation.

Fast Recovery Epitaxial Diode (FRED)
DSEI series FRED Modules

MURI2x100-04A Super Fast Diode Module
SUPER FAST DIODE MODULE TYPE 2X100A / 400V

DSEI2x121-02A FRED Module
2x123A 200V

DSEI2x101-12A FRED Module
2x99A 1200V

DSEI2x30-06C FRED Module
2x30A 400V 600V 1000V 1200V

DSEI2x31-06C FRED module
2x30A 400V 600V 1000V 1200V

DSEI2x61-06C Fast Recovery Epitaxial Diode
2X60A 600V

Fast Recovery Epitaxial Diode DSEI2X61-12B
FRED 2x60A 1200V, more than 100Kpcs annual production

SOT-227 Fast Recovery Diode Module
60A 75A 100A 125A 1200V SOT-227 FRD Module

DSS2x61-0045A Schottky Diode
2x60A 45V

Power Schottky Rectifier DSS2x160-0045A
2x160A 45V

DSS2x41-01A Schottky Diode
100V 2x40A

DSS2x101-02A Schottky Diode
200v 2x100A

DSS2x101-015A Schottky Diode
150V 2x100A

DSS 2x160-01A Power Schottky Rectifier
2x160A 100V

DSS2x61-01A Schottky Diode
100V 2x60A

DSS2x111-008A Schottky Diode
80V 2x110A

DSS2x121-0045B Schottky Diode
45V 2x120A

DSS2x81-0045B Schottky Diode
45V 2x80A

SCHOTTKY DIODE MODULE MBR600
600A 80V to 100V

Schottky Gen2 Diode
DS..I..NA series Gen2 Schottky Diode

MBRI2X60-100A SCHOTTKY DIODE MODULE
SCHOTTKY DIODE MODULE TYPE 2X60A / 100V

CASBD2X41-17F Silicon Carbide Schottky Diode
80A 1700V

CASBD2X41-17 Silicon Carbide Schottky Diode
80A 1700V

CASBD2X91-12-CASBD2X90-12 Dual Silicon Carbide Schottky Barrier Diode
CASBD2X91-12/CASBD2X90-12

CASBD2X61-17-CASBD2X60-17 Dual Silicon Carbide Schottky Barrier Diode
CASBD2X61-17/CASBD2X60-17

CASBD2X101-12-CASBD2X100-12 Dual Silicon Carbide Schottky Barrier Diode
CASBD2X101-12/CASBD2X100-12

Silicon N-Channel Power MOSFET
The silicon N-channel Enhanced VDMOSFET is manufactured using self-aligned planar technology

FN100N20 Mosfet Power Module
100A 200V

FN60N80 Silicon N-channel Enhanced MOSFET
40A/60A 800V

LFN100N50AFD Silicon N-Channel Power MOSFET Integrated FRD
90A 500V

FN82n60P Silicon N-Channel Power MOSFET
80A 600V

FN400N15A Silicon N-Channel Power MOSFET
400A 150V

CAFN50N120A Silicon N-Channel Power MOSFET
50A 1200V

CA15mR120S SiC N-MOSFET
125A 1200V

CA60MR50P Silicon N-Channel Power MOSFET Integrated FRD
90A 500V

CAFN230N20 Silicon N-Channel Power MOSFET
210A 200V

CAFN38N100A Silicon N-Channel Power MOSFET
38A 1000V

MOS420N10P Mosfet Module
420A 100V

MOS280N080 MOS Module
280A 80V

100V 200A Mosfet Module - MOS200N10P
100V 200A
The SOT-227 package is commonly used for high-power semiconductor devices such as power MOSFETs, IGBTs, Schottky Diode rectifier diodes, thyristors, and FRED modules. It is suitable for applications requiring efficient power conversion and heat dissipation, and is widely used in industrial power supplies, renewable energy systems (such as solar inverters), and electric vehicle chargers. Its design supports high current and high voltage operation, ensuring reliable performance in demanding environments.
The main difference between SOT-227 and SOT-227B packages lies in their physical dimensions and pin configurations. SOT-227B is typically a variant of SOT-227 and may have slight differences in design, such as pin spacing or package height. These differences can affect how they are mounted on circuit boards or their compatibility with other components. Therefore, when choosing which package to use, it is important to decide based on specific application requirements and circuit board design.