CASBD2X41-17 Silicon Carbide Schottky Diode

1. Key Parameters:

   • Repetitive Peak Reverse Voltage (VRRM): 1700V
   • Continuous Forward Current (IF): 80A
   • Forward Voltage (VF): 1.45V (Tj=25°C)
     
     

2. Features:

   • Low conduction loss (low VF)
   • Extremely low switching loss (low QC)
   • High ruggedness (better surge current capability)
     
     

3. Applications:

   • Power Factor Correction (PFC)
   • Inverters/Converters
   • High-performance Switch Mode Power Supplies (SMPS)
   • Motor Controllers
   • Snubber/Clamp Diode
     
     

4. Maximum Ratings (at Tc=25°C, unless otherwise specified):

   • Repetitive Peak Reverse Voltage (VRRM): 1700V
   • DC Peak Reverse Voltage (VR): 1700V
   • Non-Repetitive Forward Surge Current (IFSM): 225A (Tc=25°C)
   • Operating Junction and Storage Temperature Range (Tj, Tstg): -55 to 175°C
   • Power Dissipation (Ptot): 348W (per leg, Tc=25°C)
     
     

5. Electrical Characteristics (per leg, at Tc=25°C, unless otherwise specified):

   • Forward Voltage (VF): 1.45V (IF=25A, Tj=25°C)
   • Reverse Current (IR): Max 2.2μA (VR=1700V, Tj=25°C)
   • Total Capacitance (C): 2390pF (VR=0V, Tj=25°C, f=100kHz)
     
     

6. Mechanical Characteristics:

   • Isolation Breakdown Voltage (Visol): 3600V
   • Mounting Torque: 1~1.5Nm (recommended using M4 screws)
     
     

7. Warnings:

   • Exceeding the maximum ratings may cause device damage; it is recommended to use under 80% of the maximum ratings.
   • Pay attention to torque and flatness when installing the heatsink.
   • This product is not intended for use in applications implanted into the human body or where failure could lead to death, injury, or property damage.
     
     

CASBD2X41-17 Silicon Carbide Schottky Diode is designed for high-frequency applications requiring high efficiency and high reliability.