Product details

FS100R12KT3

The FS100R12KT3 is a high-power IGBT (Insulated Gate Bipolar Transistor) module. It features a six-pack configuration (three-phase inverter bridge with integrated freewheeling diodes) using fast trench/fieldstop IGBT3 technology paired with emitter-controlled high-efficiency diodes. This design emphasizes low switching and conduction losses, making it suitable for efficient power conversion in industrial inverters. The module includes an integrated NTC thermistor for temperature sensing and is rated for 1200 V blocking voltage with up to 140 A collector current.

Applications

Three-phase inverters for motor drives (e.g., industrial pumps, fans, servo systems).

Renewable energy systems like solar and wind inverters.

Uninterruptible power supplies (UPS) and welding equipment.

General power conversion in automation and robotics requiring high reliability and efficiency.

Features

Key Features

Switching Technology: Fast trench/fieldstop IGBT3 for reduced switching losses and improved efficiency; emitter-controlled diodes for soft recovery and low reverse recovery charge.

Thermal Design: Copper baseplate for superior heat dissipation; low thermal resistance (R_thJC = 0.26 K/W per IGBT); Al₂O₃ substrate with internal isolation (2.5 kV RMS).

Mechanical Specs: Compact housing (122 mm x 62 mm x 31 mm, 300 g); low stray inductance (21 nH); solderable pins for low-inductance connections; RoHS compliant.

Reliability: Positive temperature coefficient for easy paralleling; creepage distance 10 mm; CTI > 225; mounting torque 3–6 Nm for M5 screws.

Operational Limits: Junction temperature up to 125°C (under switching); storage -40°C to 125°C; gate voltage ±20 V max.

Main Parameters

Parameter	Symbol	Value (IGBT)	Value (Diode)	Notes
Collector-Emitter Voltage / Repetitive Reverse Voltage	V_CES / V_RRM	1200 V	1200 V	T_vj = 25°C
Nominal DC Current	I_C / I_F	100 A (T_C=80°C); 140 A (T_C=25°C)	100 A	T_vj max = 150°C
Repetitive Peak Current	I_CRM / I_FRM	200 A	200 A	t_p = 1 ms
Saturation/Forward Voltage	V_CE,sat / V_F	1.70 V (25°C); 2.15 V (125°C)	1.65 V (25°C); 2.15 V (125°C)	I_C/I_F = 100 A, V_GE = 15/0 V
Gate Threshold Voltage	V_GE,th	5.0–6.5 V	-	I_C = 4 mA, V_CE = V_GE
Total Gate Charge	Q_G	0.90 μC	-	V_GE = ±15 V
Input Capacitance	C_ies	7.10 nF	-	f=1 MHz, V_CE=25 V
Reverse Transfer Capacitance	C_res	0.30 nF	-	f=1 MHz, V_CE=25 V
Turn-On Delay Time	t_d,on	0.26 μs (25°C); 0.29 μs (125°C)	-	Inductive load, V_CC=600 V, R_G=3.9 Ω
Turn-Off Delay Time	t_d,off	0.42 μs (25°C); 0.52 μs (125°C)	-	Inductive load, V_CC=600 V, R_G=3.9 Ω
Turn-On Energy	E_on	10.0 mJ	-	V_CC=600 V, L_S=70 nH
Turn-Off Energy	E_off	10.0 mJ	-	V_CC=600 V, L_S=70 nH
Short-Circuit Current	I_SC	400 A	-	t_p ≤ 10 μs, V_CC=900 V, T_vj=125°C
Peak Reverse Recovery Current	-	-	120 A (25°C); 140 A (125°C)	-di_F/dt=2600 A/μs, V_R=600 V
Recovered Charge	Q_r	-	10.0 μC (25°C); 20.0 μC (125°C)	-di_F/dt=2600 A/μs, V_R=600 V
Thermal Resistance (Junction-to-Case)	R_thJC	0.26 K/W	0.48 K/W	Per device
Thermal Resistance (Case-to-Heatsink)	R_thCH	0.09 K/W	0.14 K/W	Per device, λ=1 W/(m·K)
Total Power Dissipation	P_tot	480 W	-	T_C=25°C, per module
NTC Resistance at 25°C	R_NTC	4.7 kΩ	-	Integrated thermistor, β=3950 K