Product Details

GTO Gate turn-off Thyristor

Part number

VDRM

VRRM

ITCM at CS

ITAVM

ITSM

VT

TVJN

dv/dt

di/dt

RthJH

RthCH

Fm

Housing

TC=85℃

10msTVJM

TVJM

V

A

μF

A

KA

V

℃

V/μs

A/μs

K/KW

KN

DG406DP25

2500

16

1200

1.5

500

8

2.5

125

1000

300

41

9

15

P

DG646BH25

2500

16

2500

6

867

18

2.6

125

1000

300

18

6

20

H

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Phase Control Thyristors (Alloying Type)

Alloying PCT, thyristor, capsule type thyristors.

Gate Turn-Off Thyristor GTO Thyristor

The positive or negative pulse signal triggers the device to turn on or turn off.

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Excellent high frequency performance, 2.5KHz-10kHz, excellent dynamic performance, all diffused structure

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Fast turn-on and high di/dt, low switching losses, short turn-off time