Product details

PIM IGBT Modules

The module features a VCEsat with a positive temperature coefficient, enhancing parallel operation stability, along with low VCEsat to reduce conduction losses. It offers high reliability and power density, ensuring stable performance in demanding applications. With low switching losses and high switching frequency, it enables efficient and fast operation. The low parasitic inductance design improves switching characteristics and reduces electromagnetic interference (EMI). Additionally, low thermal resistance, achieved through optimized aluminum oxide and copper substrates, enhances heat dissipation, while solder contact technology ensures strong and reliable connections for long-term durability.

Specification

Type	Vces (V)	Ic (A)	Vcesat (V)	Rthjc (K/W)	Housing	Infineon Equivalent
G30GP06W1E3	650	30	1.70	0.62	E1	FP30R06W1E3
G50GP06W2E3	650	50	1.70	0.52	E2	FP50R06W2E3
G10GP12W1T4	1200	10	1.90	1.40	E1	FP10R12W1T4
G15GP12W1T4	1200	15	1.90	1.15	E1	FP15R12W1T4
G25GP12W2T4	1200	25	1.90	0.85	E2	FP25R12W1T4
G35GP12W2T4	1200	35	1.90	0.70	E2	FP35R12W1T4
G10GP12YT3	1200	10	1.90	1.40	E3	FP10R12YT3
G15GP12YT3	1200	15	1.90	1.15	E3	FP15R12YT3
G15GP12T3	1200	15	1.90	1.20	G4	FP15R12KT3 / KE3G, BSM15GP120
G25GP12T3	1200	25	1.90	0.80	G4	FP25R12KT3 / KE3, BSM25GP120
G40GP12T3	1200	40	1.90	0.60	G4	FP40R12KT3 / KE3, BSM35GP120
G40GP12T3G	1200	40	1.90	0.60	G5	FP40R12KT3G / KE3G, BSM35GP120G
G50GP12T3	1200	50	1.90	0.45	G5	FP50R12KT3 / KE3
G75GP12T3	1200	75	1.90	0.35	G5	FP75R12KT3 / KE3
G25GP12T4	1200	25	1.90	0.80	G4	FP25R12KT4
G35GP12T4	1200	35	1.90	0.72	G4	FP35R12KT4
G50GP12T4	1200	50	1.90	0.54	G4	FP50R12KT4
G50GP12T4G	1200	50	1.90	0.54	G5	FP50R12KT4G
G75GP12T4	1200	75	1.90	0.35	G5	FP75R12KT4
G100GP12T4	1200	100	1.90	0.29	G5	FP100R12KT4
G150GP12T4	1200	150	1.90	0.18	G5	FP150R12KT4

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Single Switch IGBT Module

300A 400A 600A 800A 900A 1200V or 1700V, simplified circuit design and enhanced durability make them a preferred choice for various industrial and commercial applications.