SOT-227 Semiconductor Device
The device is housed in a SOT-227B package with an isolation voltage of 3000VAC, meeting industry standard outlines and RoHS compliance. The epoxy meets UL 94V-0 standards, and the base plate is made of copper with internal DCB isolation, offering advanced power cycling capabilities. These features ensure excellent performance in various power control and conversion applications, guaranteeing efficient and reliable operation.
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SOT-227 Fast Recovery Diode Module
60A 75A 100A 125A 1200V SOT-227 Ecosemitek series
Hot selling FRD Module

Fast Recovery Epitaxial Diode (FRED)
DSEI series FRED Modules general list

Single switch with AP diode and chopper diode
Single switch with AP diode, single switch no diode, low side chopper, high side chopper from Vishay design

MURI2x100-04A Super Fast Diode Module
SUPER FAST DIODE MODULE TYPE 2X100A / 400V

DSEI2x31-06C FRED module
2x30A 400V 600V 1000V 1200V

Fast Recovery Epitaxial Diode DSEI2X61-12B
2x60A 1200V, best selling FRED
more than 20Kpcs per month

DSS2x61-0045A Schottky Diode
2x60A 45V

Power Schottky Rectifier DSS2x160-0045A
2x160A 45V

DSS2x41-01A Schottky Diode
100V 2x40A

DSS2x101-02A Schottky Diode
200v 2x100A

DSS2x101-015A Schottky Diode
150V 2x100A

DSS 2x160-01A Power Schottky Rectifier
2x160A 100V

DSS2x61-01A Schottky Diode
100V 2x60A

DSS2x111-008A Schottky Diode
80V 2x110A

DSS2x121-0045B Schottky Diode
45V 2x120A

DSS2x81-0045B Schottky Diode
45V 2x80A

SS2x251FB01 Schottky Diode Module
250A 100V Schottky Diode Module

SCHOTTKY DIODE MODULE MBR600
600A 80V to 100V

Schottky Gen2 Diode
DS..I..NA series Gen2 Schottky Diode

MBRI2X60-100A SCHOTTKY DIODE MODULE
SCHOTTKY DIODE MODULE TYPE 2X60A / 100V

SOT-227B Single Thyristor Module
32A to 158A 1200V and 1600V SOT-227B

MCD40-12io6 Thyristor Diode Module
40A 2x1200V

DSI2x55-12A Rectifier Diode
2x60A 1200V and 1600V

1 phase full controlled thyristor module MMO62-12io6
62A 1200V

MMO74-12io6 AC controller antiparallel thyristor
90A 1200V

MMO90-14io6 1 phase full-controlled thyristor
50A 1400V

Power FET module VMO580-02F
HipPerFET Module VMO580-02F 200V 580A 3.8m N-Channel Enhancement mode
Silicon N-Channel Power MOSFET
The silicon N-channel Enhanced VDMOSFET is manufactured using self-aligned planar technology

FN100N20 Mosfet Power Module
100A 200V
FN60N80 Silicon N-channel Enhanced MOSFET
40A/60A 800V
LFN100N50AFD Silicon N-Channel Power MOSFET Integrated FRD
90A 500V
FN82n60P Silicon N-Channel Power MOSFET
80A 600V

FN400N15A Silicon N-Channel Power MOSFET
400A 150V
CAFN50N120A Silicon N-Channel Power MOSFET
50A 1200V

CA15mR120S SiC N-MOSFET
125A 1200V
CA60MR50P Silicon N-Channel Power MOSFET Integrated FRD
90A 500V
CAFN230N20 Silicon N-Channel Power MOSFET
210A 200V
CAFN38N100A Silicon N-Channel Power MOSFET
38A 1000V

MOS420N10P Mosfet Module
420A 100V

MOS280N080 MOS Module
280A 80V

100V 200A Mosfet Module - MOS200N10P
100V 200A
The SOT-227 package is commonly used for high-power semiconductor devices such as power MOSFETs, IGBTs, Schottky Diode rectifier diodes, thyristors, and FRED modules. It is suitable for applications requiring efficient power conversion and heat dissipation, and is widely used in industrial power supplies, renewable energy systems (such as solar inverters), and electric vehicle chargers. Its design supports high current and high voltage operation, ensuring reliable performance in demanding environments.
The main difference between SOT-227 and SOT-227B packages lies in their physical dimensions and pin configurations. SOT-227B is typically a variant of SOT-227 and may have slight differences in design, such as pin spacing or package height. These differences can affect how they are mounted on circuit boards or their compatibility with other components. Therefore, when choosing which package to use, it is important to decide based on specific application requirements and circuit board design.







